Comprehensive analysis of the short channel effect in the SOI gate controlled hybrid transistor (GCHT)RU HUANG; YANG YUAN WANG.International journal of electronics. 1999, Vol 86, Num 6, pp 685-698, issn 0020-7217Article

A new method to simulate random dopant induced threshold voltage fluctuations in sub-50 nm MOSFET's with non-uniform channel dopingJUN YIN; XIAOKANG SHI; RU HUANG et al.Solid-state electronics. 2006, Vol 50, Num 9-10, pp 1551-1556, issn 0038-1101, 6 p.Article

A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI nmosfetsJIN HE; XING ZHANG; RU HUANG et al.Semiconductor science and technology. 2002, Vol 17, Num 5, pp 487-492, issn 0268-1242Article

Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETsXIA AN; RU HUANG; XING ZHANG et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 479-483, issn 0038-1101, 5 p.Article

A 0.4-V low noise amplifier using forward body bias technology for 5 GHz applicationWU, Dake; RU HUANG; WONG, Waisum et al.IEEE microwave and wireless components letters. 2007, Vol 17, Num 7, pp 543-545, issn 1531-1309, 3 p.Article

A study on a two-step technique of growing Ga₂O₃/ZnO films ammoniated at different temperaturesSHOUBIN XUE; XING ZHANG; RU HUANG et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 3, pp 460-464, issn 1386-9477, 5 p.Article

Comparison of device performance and scaling capability of thin-body GOI and SOI MOSFETsXIA AN; RU HUANG; XING ZHANG et al.Semiconductor science and technology. 2005, Vol 20, Num 10, pp 1034-1038, issn 0268-1242, 5 p.Article

A control-gate-assisted erasing method for a single-poly EEPROM cell with metallic control gate structureDAKE WU; RU HUANG; WAISUM WONG et al.Semiconductor science and technology. 2009, Vol 24, Num 7, issn 0268-1242, 075012.1-075012.4Article

Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drainZHAOYI KANG; LIANGLIANG ZHANG; RUNSHENG WANG et al.Semiconductor science and technology. 2009, Vol 24, Num 10, issn 0268-1242, 105001.1-105001.8Article

Scaling capability and design guidelines of a nano-scale quasi-SOI device for low operation power and high-performance applicationsYU TIAN; RU HUANG; XING ZHANG et al.Semiconductor science and technology. 2006, Vol 21, Num 4, pp 473-478, issn 0268-1242, 6 p.Article

A novel nanoscaled device concept: Quasi-SOI MOSFET to eliminate the potential weaknesses of UTB SOI MOSFETYU TIAN; RU HUANG; XING ZHANG et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 561-568, issn 0018-9383, 8 p.Article

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputteringSHOUBIN XUE; XING ZHANG; RU HUANG et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 94, Num 2, pp 287-291, issn 0947-8396, 5 p.Article

Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin filmsSHOUBIN XUE; XING ZHANG; RU HUANG et al.Applied surface science. 2008, Vol 254, Num 21, pp 6766-6769, issn 0169-4332, 4 p.Article

High-performance integrated inductor and effective crosstalk isolation using post-CMOS selective grown porous silicon (SGPS) technique for RFIC applicationsCHEN LI; HUAILIN LIAO; LI YANG et al.Solid-state electronics. 2007, Vol 51, Num 6, pp 989-994, issn 0038-1101, 6 p.Article

A novel envelope protein involved in White spot syndrome virus infectionRU HUANG; YUNLI XIE; JIANHONG ZHANG et al.Journal of general virology. 2005, Vol 86, pp 1357-1361, issn 0022-1317, 5 p., 5Article

Cloning and expression of CD24 gene in human hepatocellular carcinoma : a potential early tumor marker gene correlates with p53 mutation and tumor differentiationLAN-RU HUANG; HEY-CHI HSU.Cancer research (Baltimore). 1995, Vol 55, Num 20, pp 4717-4721, issn 0008-5472Article

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I―Modeling and Simulation MethodXIAOBO JIANG; RUNSHENG WANG; TAO YU et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 11, pp 3669-3675, issn 0018-9383, 7 p.Article

Miniature CMOS Stacked Spiral-Coupled Directional Coupler With ―67-dB Isolation and ―0.8-dub Insertion LossLE YE; YONGAN ZHENG; JIAYI WANG et al.IEEE electron device letters. 2012, Vol 33, Num 7, pp 919-921, issn 0741-3106, 3 p.Article

Design optimization of structural parameters in double gate MOSFETs for RF applicationsJIALE LIANG; HAN XIAO; RU HUANG et al.Semiconductor science and technology. 2008, Vol 23, Num 5, issn 0268-1242, 055019.1-055019.8Article

Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF ApplicationsJING ZHUGE; RUNSHENG WANG; RU HUANG et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 2142-2147, issn 0018-9383, 6 p.Article

Performance improvement of the EEPROM cells with the standard logic process featuring a metal finger coupling capacitorPOREN TANG; RU HUANG; DAKE WU et al.Semiconductor science and technology. 2010, Vol 25, Num 12, issn 0268-1242, 125003.1-125003.4Article

Formation of β-SiC nanowires by annealing SiC films in hydrogen atmosphereLI YANG; XING ZHANG; RU HUANG et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 35, Num 1, pp 146-150, issn 1386-9477, 5 p.Article

Quasi-SOI MOSFET : a novel architecture combining the advantages of SOI and bulk devicesHAN XIAO; YU TIAN; XIA AN et al.Semiconductor science and technology. 2005, Vol 20, Num 9, pp 925-931, issn 0268-1242, 7 p.Article

Two-step synthesis of one-dimensional single crystalline GaN nanowiresLI YANG; XING ZHANG; RU HUANG et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 25, Num 4, pp 582-586, issn 1386-9477, 5 p.Article

Evidence for delayed-type hypersensitivity mechanisms in glomerular crescent formationXIAO RU HUANG; HOLDSWORTH, S. R; TIPPING, P. G et al.Kidney international. 1994, Vol 46, Num 1, pp 69-78, issn 0085-2538Article